Skip to content

Confirmation of Candidature - Candidate : Hung Nguyen

Thermal Coupling Effect of 3C-SiC/Si Heterostructure for Sensing in Harsh Environment
When
23 AUG 2022
10.00 AM - 11.30 AM
Where
Online

There is a high need for and interest in the development of sensing technologies that can function in harsh environments. Increasing the sensitivity of the sensors is crucial for the construction of sensor sensing networks (like the internet of things) as well as for maintaining the efficiency and security of instruments that operate in severe environments. Micro Electro-Mechanical Systems (MEMS)-based sensors have advanced significantly over the past several decades in response to rising demands for high sensitivity, rapid response, low power consumption, compact size, and mass production. 
Due to its wide band gap, high breakdown voltage, chemical resistance, high Young's modulus, and transparency, silicon carbide (SiC) has recently drawn a lot of attention and emerged as a promising material for MEMS sensors working in challenging conditions. Additionally, coupling of different sensing effects has been employed to alter electrical transport in logic circuits, augment the photovoltaic performance of solar cells, and improve the sensitivity and detection resolution of sensors. Therefore, finding a new technique or approach to combine the sensing effects with other physical effects may not only enhance the performance of sensors but also open up a new field of study.

For more information, please contact the Graduate Research School.